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| GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm * * * * FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 s (typ.) (IC = 40 A) FRD : trr = 0.7 s (typ.) (di/dt = -20 A/s) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg Rating 1500 25 40 80 30 80 200 150 -55~150 Unit V V A A W C C JEDEC JEITA TOSHIBA 2-21F2C Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Weight: 9.75 g (typ.) Equivalent Circuit Collector Gate Emitter 1 2002-01-18 GT40T301 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Emitter-collector forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VECF trr Rth (j-c) 15 51 15 V 0 -15 V IECF = 30 A, VGE = 0 IECF = 30 A, VGE = 0, di/dt = -20 A/s IGBT Diode Test Condition VGE = 25 V, VCE = 0 VCE = 1500 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 4.0 Typ. 3.7 2900 0.40 0.45 0.23 0.6 1.9 0.7 Max 500 1.0 7.0 5.0 Unit nA mA V V pF 0.40 s 600 V 2.5 3.0 0.625 1.25 V s C/W 2 2002-01-18 GT40T301 IC - VCE 100 25 80 20 15 10 Common emitter VCE - VGE (V) 12 Tc = -40C 8 60 6 20 4 80 40 (A) 60 40 10 Collector-emitter voltage VCE Collector current IC 20 VGE = 8 V 0 0 2 4 6 8 10 2 IC = 10 A 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 10 Common emitter 10 Tc = 25C 8 VCE - VGE (V) (V) 8 Collector-emitter voltage VCE Collector-emitter voltage VCE 80 6 60 40 4 20 2 Common emitter Tc = 125C 0 0 6 60 4 40 20 IC = 10 A 80 2 IC = 10 A 0 0 4 8 12 16 20 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 100 Common emitter 80 10 VCE (sat) - Tc Common emitter Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V VGE = 15 V 8 IC (A) 60 6 Collector current 80 60 40 25 20 Tc = 125C -40 0 0 4 8 12 16 20 4 40 20 2 IC = 10 A 0 -80 -40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2002-01-18 GT40T301 VCE, VGE - QG 10 Switching time - RG Common Common emitter emitter RL = 7.5 Tc = 25C VCC = 600 V IC = 40 A VGG = 15 V Tc = 25C Collector-emitter voltage VCE (x10 V) Gate-emitter voltage VGE (V) (s) 30 5 3 Switching time 20 1 0.5 0.3 toff ton tr 10 200 300 tf VCE = 100 V 0 0 40 80 120 160 200 240 280 0.1 1 3 5 10 30 50 100 300 500 1000 Gate charge QG (nC) Gate resistance RG () Switching time - IC 10 5 3 Common emitter VCC = 600 V RG = 51 VGG = 15 V Tc = 25C 10000 5000 3000 C - VCE Cies (s) (pF) ton tr 1000 500 300 Coes 100 50 30 10 5 3 1 1 Common emitter VGE = 0 V f = 1 MHz Tc = 25C Cres 1 0.5 0.3 toff Switching time tf 0.1 0.05 0.03 0.01 0 10 20 30 40 50 Capacitance C 3 5 10 30 50 100 Collector current IC (A) Collector-emitter voltage VCE (V) Safe operating area 300 IC max (pulsed)* 200 10 ms* 1 ms* 10 s* IC max (continuous) 100 s* 100 Reverse bias SOA (A) 100 50 30 IC Collector current IC Collector current (A) 30 10 Tj < 125C = VGE = 15 V RG = 51 3 10 30 100 300 1000 3000 3000 10 5 DC operation 3 *: Single nonrepetitive pulse Tc = 25C 1 Curves must be derated linearly with increase in 0.5 temperature. 0.3 1 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 4 2002-01-18 GT40T301 10 1 Rth (t) - tw 100 IECF - VECF Common collector Emitter-collector forward current IECF (A) Transient thermal impedance Rth (t) (C/W) 10 0 Diode IGBT 80 60 Tc = 40C 25 10-1 40 125 20 10-2 10-3 10-5 Tc = 25C 10-4 10-3 10-2 10-1 10 0 10 1 10 2 0 0 1 2 3 4 5 Pulse width tw (s) Emitter-collector forward voltage VECF (V) Irr, trr - IECF 2.5 20 1.0 100 Irr, trr - di/dt (A) Common collector Common collector 80 IECF = 30 A Tc = 25C (A) (s) Irr Tc = 25C Peak reverse recovery current 1.5 12 Irr 8 trr 4 0.6 Peak reverse recovery current trr Reverse recovery time Reverse recovery time trr Irr 2.0 16 (s) di/dt = -20 A/s 0.8 60 trr 40 1.0 0.4 0.5 0.2 20 Irr 0 0 0 20 40 60 80 100 0 0 0 40 80 120 160 200 240 Emitter-collector forward current IECF (A) di/dt (A/s) 5 2002-01-18 GT40T301 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-01-18 |
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